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SUP45N03-13L
Vishay Siliconix
MOSFET SPECIFICATION S (T J =25 _ C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = 250 m A
30
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I DS = 250 m A
V DS = 0 V, V GS = " 20 V
1
3
" 100
V
nA
V DS = 30 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 30 V, V GS = 0 V, T J = 125 _ C
50
mA
V DS = 30 V, V GS = 0 V, T J = 175 _ C
150
On-State Drain Current a
I D(on)
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 45 A
45
0.01
0.013
A
Drain-Source On-State Resistance a
r DS(on)
V GS = 10 V, I D = 45 A, T J = 125 _ C
V GS = 10 V, I D = 45 A, T J = 175 _ C
0.0155
0.02
0.02
0.026
W
V GS = 4.5 V, I D = 20 A
0.0145
0.02
Forward Transconductance a
g fs
V DS = 15 V, I D = 45 A
20
S
Dynamic b
Input Capacitance
C iss
2730
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge c
C oss
C rss
Q g
V GS = 0 V, V DS = 25 V, f = 1 MHz
450
220
45
70
pF
Gate-Source
Charge c
Q gs
V DS = 15 V, V GS = 10 V, I D = 45 A
8.5
nC
Gate-Drain Charge c
Q gd
8
Turn-On Delay Time c
t d(on)
11
20
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 15 V, R L = 0.33 W
I D ] 45 A, V GEN = 10 V, R G = 2.5 W
9
38
11
20
70
20
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 _ C) b
Continuous Current
Pulsed Current
I s
I SM
45
100
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = 45 A, V GS = 0 V
I F = 45 A, di/dt = 100 A/ m s
1
35
1.7
0.03
1.3
70
V
ns
A
m C
Notes:
a. Pulse test; pulse width v 300 m s, duty cycle v 2%.
e. Guaranteed by design, not subject to production testing.
b. Independent of operating temperature.
www.vishay.com
2
Document Number: 70804
S-05011 — Rev. F, 29-Oct-01
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